Fermi-FET transistor technology can lead to significant improvement in circuit performance, layout density, power requirements, and manufacturing cost with only a moderate alteration of traditional MOSFET manufacturing technology. This technology makes use of a subtle optimization of traditional buried channel technology to overcome the known shortcomings of buried channel while maintaining large improvements in channel mobility. This technology merges the mobility and low drain current leakage of BCA devices as well as the higher short channel effect immunity of SCI devices. This paper highlights aspects of the technology in a non-mathematical presentation to give a sound general understanding of why the technology is the most promising avenue for advanced very short devices.
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