ABSTRACT
Low-k dielectrics are the very latest path breaking development in the field of Integrated Electronics. It is well on its way replacing the Al / SiO2 interconnects with the help of copper in CMOS fabrication of IC Chips. The CMOS technology has an in-built coupling capacitance which increases the time delay, thereby reducing associated processing speeds. This was compensated by reducing the thickness of the Al / SiO2 interconnects. There is a limit to the reduction in thickness after which an inverse effect is seen. This is where Cu / low-k dielectric interconnects come into the picture. In this case, the processing speed and hence the device performance is improved by reducing the RC delay. Low-k dielectrics are materials which have a dielectric constant less than 3. Air has the least k of 1, and so is used for production of low-k dielectric materials.
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